Technical parameters/number of pins: 6
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363-6
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Jiangsu Changjiang Electronics Technology | 功能相似 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
|||
BST52
|
NXP | 功能相似 | SOT-89 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
||
BST52
|
Central Semiconductor | 功能相似 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
|||
BST52
|
Zetex | 功能相似 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
|||
BST52
|
GMR Semiconductor | 功能相似 |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
|||
BST52
|
Nexperia | 功能相似 | UPAK |
NXP BST52 单晶体管 双极, 达林顿, NPN, 80 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
|
||
BST52,115
|
NXP | 功能相似 | SOT-89-3 |
Nexperia BST52,115 NPN 达林顿晶体管对, 1 A, Vce=80 V, HFE=1000, 4引脚 UPAK封装
|
||
MUN5135DW1T1G
|
ON Semiconductor | 功能相似 | SOT-363 |
双偏置电阻晶体管 Dual Bias Resistor Transistors
|
||
PUMB10
|
Nexperia | 功能相似 | UMT |
双电阻器双数字晶体管,Nexperia ### 数字晶体管,Nexperia 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管,包含一个或两个集成电阻器。 单一系列输入电阻器,或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
|
||
PUMB10
|
NXP | 功能相似 | SOT-363 |
双电阻器双数字晶体管,Nexperia ### 数字晶体管,Nexperia 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管,包含一个或两个集成电阻器。 单一系列输入电阻器,或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
|
||
PUMB10,115
|
NXP | 功能相似 | SOT-363-6 |
Nexperia PUMB10,115 双 PNP 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:0.047, 6引脚 UMT封装
|
||
PUMB10,115
|
Nexperia | 功能相似 | SOT-363-6 |
Nexperia PUMB10,115 双 PNP 数字晶体管, 100 mA, Vce=50 V, 2.2 kΩ, 电阻比:0.047, 6引脚 UMT封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review