Technical parameters/number of pins: | 6 |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 200 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 100 |
|
Technical parameters/DC current gain (hFE): | 100 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-363 |
|
Dimensions/Length: | 2.2 mm |
|
Dimensions/Width: | 1.35 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-363 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
|
Other/Manufacturing Applications: | Computers & Computer Peripherals, Power Management, Automation & Process Control, Automotive, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PUMB10
|
Nexperia | 功能相似 | UMT |
PNP/PNP resistor-equipped transistors; R1 = 2.2kΩ, R2 = 47kΩ
|
||
PUMB10
|
NXP | 功能相似 | SOT-363 |
PNP/PNP resistor-equipped transistors; R1 = 2.2kΩ, R2 = 47kΩ
|
||
PUMB10,115
|
NXP | 功能相似 | SOT-363-6 |
NXP PUMB10,115 双极晶体管阵列, BRT, PNP, -50 V, 200 mW, -100 mA, 100 hFE, SOT-363
|
||
PUMB10,115
|
Nexperia | 功能相似 | SOT-363-6 |
NXP PUMB10,115 双极晶体管阵列, BRT, PNP, -50 V, 200 mW, -100 mA, 100 hFE, SOT-363
|
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