Technical parameters/forward voltage: 1.7 V
Technical parameters/reverse recovery time: 75 ns
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 150 A
Technical parameters/forward voltage (Max): 1.7 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/working junction temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/length: 9.5 mm
External dimensions/width: 5.3 mm
External dimensions/height: 5.3 mm
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Other/Manufacturing Applications: Power Management, Consumer Electronics, Commercial, Computers & Computer Peripherals, Communications & Networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Galaxy Semi-Conductor | 功能相似 |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
|
|||
|
|
HY Electronic | 功能相似 |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
|
|||
1N5407G
|
Secos | 功能相似 |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
|
|||
|
1N5407G
|
DIYI Electronic | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
|
||
|
1N5407G
|
EIC | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5407G 标准功率二极管, 单, 800 V, 3 A, 1 V, 200 A 新
|
||
|
|
Electronics Industry | 类似代替 |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
|||
|
|
迪一电子 | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
||
|
|
Jinan Gude Electronic Device | 类似代替 |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
|||
HER307
|
DC Components | 类似代替 |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
|||
|
|
HY Electronic | 类似代替 |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
|||
|
HER307
|
Leshan Radio | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
||
|
HER307
|
Galaxy Semi-Conductor | 类似代替 |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
|||
|
HER307
|
SynSemi | 类似代替 |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
|||
|
HER307
|
台湾唯圣 | 类似代替 | DO-27 |
TAIWAN SEMICONDUCTOR HER307 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 150 A
|
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