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Technical parameters/rise/fall time: 20ns, 15ns
Technical parameters/number of output interfaces: 2
Technical parameters/output current: 4 A
Technical parameters/dissipated power: 780 mW
Technical parameters/rise time: 23 ns
Technical parameters/descent time: 23 ns
Technical parameters/descent time (Max): 40 ns
Technical parameters/rise time (Max): 40 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 780 mW
Technical parameters/power supply voltage: 4.5V ~ 15V
Technical parameters/power supply voltage (Max): 15 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MC33151DR2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
ON SEMICONDUCTOR MC33151DR2G MOSFET Driver, 6.5V-18V supply, SOIC-8 新
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Freescale | 功能相似 | SOIC |
ON SEMICONDUCTOR MC33152DR2G MOSFET Driver, 6.1V-18V supply, SOIC-8 新
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MC33152DR2G
|
ON Semiconductor | 功能相似 | SOIC-8 |
ON SEMICONDUCTOR MC33152DR2G MOSFET Driver, 6.1V-18V supply, SOIC-8 新
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