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Specification parameters
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Technical parameters/power supply voltage (DC):

18.0V (max)

Technical parameters/operating voltage:

6.1V ~ 18V

Technical parameters/rise/fall time:

36ns, 32ns

Technical parameters/halogen-free state:

Halogen Free

Technical parameters/number of output interfaces:

Technical parameters/number of pins:

Technical parameters/dissipated power:

0.56 W

Technical parameters/rise time:

36 ns

Technical parameters/output current (Max):

1.5 A

Technical parameters/descent time:

32 ns

Technical parameters/operating temperature (Max):

85 ℃

Technical parameters/operating temperature (Min):

-40 ℃

Technical parameters/dissipated power (Max):

560 mW

Technical parameters/power supply voltage:

6.1V ~ 18V

Technical parameters/power supply voltage (Max):

18 V

Technical parameters/power supply voltage (Min):

6.1 V

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOIC-8

Dimensions/Length:

5 mm

Dimensions/Width:

4 mm

Dimensions/Height:

1.5 mm

Dimensions/Packaging:

SOIC-8

Physical parameters/operating temperature:

-40℃ ~ 85℃

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with standard/REACH SVHC version:

2015/12/17

Customs

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	MC33151DR2G	ON Semiconductor	类似代替	SOIC-8	ON SEMICONDUCTOR MC33151DR2G MOSFET Driver, 6.5V-18V supply, SOIC-8 新	PDF
	MC33152DG	ON Semiconductor	类似代替	SOIC-8	ON SEMICONDUCTOR MC33152DG 双功率驱动器, 6.1V-18V电源, 1.5A输出, 40ns延迟, SOIC-8	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643