Technical parameters/number of pins: 3
Technical parameters/forward current: 30 A
Technical parameters/Maximum forward surge current (Ifsm): 200 A
Technical parameters/forward voltage (Max): 940 mV
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Each
Other/Manufacturing Applications: Power Management, Military and Aerospace, Power Management, Defense, Defense, Aerospace, Defence, Military
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standards/military grade: Yes
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBR30100CT
|
Taiwan Semiconductor | 类似代替 | TO-220-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
MBR30100CT
|
SMC | 类似代替 | TO-220-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
MBR30100CT
|
Multicomp | 类似代替 | TO-220 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
|
|
PINGWEI | 类似代替 | TO-220 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
MBR30100CT
|
CJ | 类似代替 | TO-220-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
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