Technical parameters/number of pins: | 3 |
|
Technical parameters/forward current: | 30 A |
|
Technical parameters/Maximum forward surge current (Ifsm): | 200 A |
|
Technical parameters/forward voltage (Max): | 940 mV |
|
Technical parameters/forward current (Max): | 30 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.5 mm |
|
Dimensions/Width: | 4.7 mm |
|
Dimensions/Height: | 8.24 mm |
|
Dimensions/Packaging: | TO-220-3 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Each |
|
Other/Manufacturing Applications: | Power Management, Aerospace, Defence, Military, Power management, national defense, military and aviation |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/military grade: | Yes |
|
Compliant with standard/REACH SVHC version: | 2016/06/20 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBR30100CT
|
Taiwan Semiconductor | 类似代替 | TO-220-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
MBR30100CT
|
SMC | 类似代替 | TO-220-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
MBR30100CT
|
Multicomp | 类似代替 | TO-220 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
|
|
PINGWEI | 类似代替 | TO-220 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
MBR30100CT
|
CJ | 类似代替 | TO-220-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
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