Technical parameters/dissipated power: 1.25 W
Technical parameters/Input capacitance (Ciss): 427.12pF @6V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 900 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3.05 mm
External dimensions/width: 1.4 mm
External dimensions/height: 0.95 mm
External dimensions/packaging: SOT-23
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MGSF2N02ELT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MGSF2N02ELT1G 晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
|
||
SI2302ADS-T1-GE3
|
VISHAY | 功能相似 | SOT-23-3 |
Trans MOSFET N-CH 20V 2.1A 3Pin TO-236 T/R
|
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