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Technical parameters/number of output interfaces: 1
Technical parameters/Input voltage (DC): 4.00 V
Technical parameters/output current: 500 mA
Technical parameters/power supply current: 0.01 mA
Technical parameters/dissipated power: 309 mW
Technical parameters/output current (Max): 500mA, 10mA
Technical parameters/output current (Min): 0.5 A
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 309 mW
Technical parameters/power supply voltage: 2.7V ~ 4V
Technical parameters/power supply voltage (Max): 4 V
Technical parameters/power supply voltage (Min): 2.7 V
Technical parameters/input voltage: 2.7V ~ 4V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: SOT-23-5
External dimensions/height: 1.3 mm
External dimensions/packaging: SOT-23-5
Physical parameters/operating temperature: -40℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TPS2101DBVR
|
TI | 类似代替 | SOT-23-5 |
电源开关 IC - 配电 Dual In/Single Out MOSFET
|
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TPS2101DBVRG4
|
TI | 类似代替 | SOT-23-5 |
2.7-4V Dual In/Single Out MOSFET, 0.5A Main/0.01A Aux Input, Act-Hi Enable, Comm. Temp. 5-SOT-23 -40℃ to 85℃
|
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TPS2101DBVT
|
TI | 类似代替 | SOT-23-5 |
MOSFET 和 IGBT 驱动器，高达 2.5A，Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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