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Model TPS2101DBVT
Description MOSFET With IGBT drivers, up to 2.5A, Texas Instruments' dedicated gate driver IC series is suitable for MOSFET and IGBT applications. The device can provide high current output compatible with MOSFET and IGBT power devices, and offers various configurations and packaging types. ###MOSFET&IGBT drivers, Texas Instruments
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Brand: TI
Packaging SOT-23-5
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.27  yuan 7.27yuan
10+:
$ 8.7204
100+:
$ 8.2844
500+:
$ 7.9937
1000+:
$ 7.9792
2000+:
$ 7.9210
5000+:
$ 7.8484
7500+:
$ 7.7902
10000+:
$ 7.7612
Quantity
10+
100+
500+
1000+
2000+
Price
$8.7204
$8.2844
$7.9937
$7.9792
$7.9210
Price $ 8.7204 $ 8.2844 $ 7.9937 $ 7.9792 $ 7.9210
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9999) Minimum order quantity(10)
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Technical parameters/power supply voltage (DC): 4.00V (max)

Technical parameters/number of output interfaces: 1

Technical parameters/Input voltage (DC): 4.00 V

Technical parameters/output current: 500 mA

Technical parameters/power supply current: 10 µA

Technical parameters/dissipated power: 309 mW

Technical parameters/input voltage (Max): 4 V

Technical parameters/input voltage (Min): 2.7 V

Technical parameters/output current (Max): 500mA, 10mA

Technical parameters/output current (Min): 0.5 A

Technical parameters/number of inputs: 2

Technical parameters/operating temperature (Max): 70 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 309 mW

Technical parameters/power supply voltage: 2.7V ~ 4V

Technical parameters/power supply voltage (Max): 4 V

Technical parameters/power supply voltage (Min): 2.7 V

Technical parameters/input voltage: 2.7V ~ 4V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 5

Encapsulation parameters/Encapsulation: SOT-23-5

External dimensions/length: 2.9 mm

External dimensions/width: 1.6 mm

External dimensions/height: 1.15 mm

External dimensions/packaging: SOT-23-5

Physical parameters/operating temperature: -40℃ ~ 70℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Handheld/Mobile Devices

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
TPS2101DBVR TPS2101DBVR TI 完全替代 SOT-23-5
电源开关 IC - 配电 Dual In/Single Out MOSFET
TPS2101DBVRG4 TPS2101DBVRG4 TI 类似代替 SOT-23-5
2.7-4V Dual In/Single Out MOSFET, 0.5A Main/0.01A Aux Input, Act-Hi Enable, Comm. Temp. 5-SOT-23 -40℃ to 85℃
TPS2101DBVT TPS2101DBVT TI 类似代替 SOT-23-5
MOSFET 和 IGBT 驱动器，高达 2.5A，Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments

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