Chip AI consultant
Technical parameters/output current: ≤50 mA
Technical parameters/power supply current: 70 µA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/Input compensation drift: 500 nV/K
Technical parameters/bandwidth: 187 kHz
Technical parameters/conversion rate: 120 mV/μs
Technical parameters/gain bandwidth product: 200 kHz
Technical parameters/input compensation voltage: 200 µV
Technical parameters/input bias current: 1 pA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 725 mW
Technical parameters/Common Mode Rejection Ratio (Min): 70 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TLV2252ID
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS TLV2252ID 运算放大器, 双路, 187 kHz, 2个放大器, 0.1 V/µs, 2.7V 至 8V, SOIC, 8 引脚
|
||
TLV2252IDR
|
TI | 完全替代 | SOIC-8 |
高级LinCMOSE轨到轨极低功耗运算放大器 Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS
|
||
TLV2252QD
|
TI | 完全替代 | SOIC-8 |
高级LinCMOS轨到轨极低功耗POERATIONAL放大器 Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER POERATIONAL AMPLIFIERS
|
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