Technical parameters/power supply current: 6 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/Input compensation drift: 1.80 µV/K
Technical parameters/bandwidth: 12.0 MHz
Technical parameters/conversion rate: 5.00 V/μs
Technical parameters/gain bandwidth product: 12 MHz
Technical parameters/input compensation voltage: 300 µV
Technical parameters/input bias current: 100 nA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube, Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BA8522RF-E2
|
ROHM Semiconductor | 功能相似 | SOP-8 |
OP Amp Dual GP 16V/32V 8Pin SOP T/R
|
||
TL5580IDR
|
TI | 完全替代 | SOIC-8 |
双路低噪声宽带宽精密放大器 DUAL LOW-NOISE WIDE-BANDWIDTH PRECISION AMPLIFIER
|
||
TL5580IDRG4
|
TI | 类似代替 | SOIC-8 |
精密放大器 Dual Low-Noise Wide Bndwdth Precsion Amp
|
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