Technical parameters/number of channels: 2
Technical parameters/Input compensation drift: 1.80 µV/K
Technical parameters/bandwidth: 12.0 MHz
Technical parameters/conversion rate: 5.00 V/μs
Technical parameters/gain bandwidth product: 12.0 MHz
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BA8522RF-E2
|
ROHM Semiconductor | 功能相似 | SOP-8 |
OP Amp Dual GP 16V/32V 8Pin SOP T/R
|
||
TL5580AIDG4
|
TI | 功能相似 | TSSOP |
Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-SOIC -40℃ to 85℃
|
||
TL5580IDG4
|
TI | 类似代替 | SOIC-8 |
精密放大器 Dual Low-Noise Wide Bndwdth Precsion Amp
|
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