Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 35 W
Technical parameters/threshold voltage: 2.4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 3.5A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Power Management, Industrial, Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFP4N60P3
|
IXYS Semiconductor | 功能相似 | TO-220-3 |
N 通道功率 MOSFET,IXYS HiperFET™ Polar3™ 系列 一系列 IXYS Polar3™ 系列 N 通道功率 MOSFET,具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管,IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
||
IXTY4N60P
|
IXYS Semiconductor | 功能相似 | TO-252-3 |
DPAK N-CH 600V 4A
|
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