Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 89W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 600 V |
|
Technical parameters/Continuous drain current (Ids): | 4A |
|
Technical parameters/Input capacitance (Ciss): | 635pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 89W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTA4N60P
|
IXYS Semiconductor | 类似代替 | TO-252-3 |
Trans MOSFET N-CH 600V 4A 3Pin(2+Tab) D2PAK
|
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