Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 33pF @5V(Vds)
Technical parameters/rated power (Max): 272 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/packaging: SOT-363-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NVTJD4001NT1G
|
ON Semiconductor | 完全替代 | SOT-363-6 |
N沟道MOSFET,30V,250mA,1.5Ω
|
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