Chip AI consultant
Technical parameters/number of pins: | 6 |
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Technical parameters/drain source resistance: | 1 Ω |
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Technical parameters/dissipated power: | 0.272 W |
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Technical parameters/threshold voltage: | 1.2 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/rise time: | 23 ns |
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Technical parameters/Input capacitance (Ciss): | 33pF @5V(Vds) |
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Technical parameters/rated power (Max): | 272 mW |
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Technical parameters/descent time: | 82 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 272 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-363-6 |
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Dimensions/Packaging: | SOT-363-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs Information/Hong Kong Import and Export License: | NLR |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTJD4001NT1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR NTJD4001NT1G 双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
|
||
NVTJD4001NT2G
|
ON Semiconductor | 完全替代 | SOT-363-6 |
NVTJD4001N: 双 N 沟道，小信号 MOSFET，30V，250mA，1.5Ω
|
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