Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/maximum allowable collector current: 2A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5884
|
Central Semiconductor | 功能相似 | TO-204 |
NTE ELECTRONICS 2N5884 TRANSISTOR PNP SILICON 80V, IC-25A TO-3 CASE HIGH POWER AMPLIFIER APPLICATIONS COMP TO 2N5886
|
||
|
|
Microsemi | 功能相似 | TO-3 |
NTE ELECTRONICS 2N5884 TRANSISTOR PNP SILICON 80V, IC-25A TO-3 CASE HIGH POWER AMPLIFIER APPLICATIONS COMP TO 2N5886
|
||
2N5884
|
SPC | 功能相似 | TO-3 |
NTE ELECTRONICS 2N5884 TRANSISTOR PNP SILICON 80V, IC-25A TO-3 CASE HIGH POWER AMPLIFIER APPLICATIONS COMP TO 2N5886
|
||
|
|
Inchange Semiconductor | 功能相似 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
|||
TIP49
|
ST Microelectronics | 功能相似 | TO-220-3 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
TIP49
|
Rochester | 功能相似 | TO-220 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
TIP49
|
Rectron Semiconductor | 功能相似 | TO-220 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
TIP49
|
Central Semiconductor | 功能相似 | TO-220-3 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
TIP49
|
Fairchild | 功能相似 | TO-220-3 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review