Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 3A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Solid State | 功能相似 | TO-220 |
TO 220 4A Silicon Transistor
|
||
TIP30AG
|
ON Semiconductor | 功能相似 | TO-220-3 |
互补硅塑料功率晶体管 Complementary Silicon Plastic Power Transistors
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||
|
|
Boca Semiconductor | 功能相似 | 3 |
Bipolar Transistors - BJT . .
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TIP31A
|
ON Semiconductor | 功能相似 | TO-220-3 |
Bipolar Transistors - BJT . .
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TIP31A
|
Multicomp | 功能相似 | TO-220 |
Bipolar Transistors - BJT . .
|
||
TIP31A
|
Fairchild | 功能相似 | TO-220-3 |
Bipolar Transistors - BJT . .
|
||
TIP31A
|
NTE Electronics | 功能相似 |
Bipolar Transistors - BJT . .
|
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