Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/rated power: 2 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 1000 @1A, 4V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 50 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 16.51 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP111TU
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON Semiconductor TIP111TU NPN 达林顿晶体管对, 4 A, Vce=80 V, HFE=500, 3引脚 TO-220封装
|
||
TIP111TU
|
Fairchild | 类似代替 | TO-220-3 |
ON Semiconductor TIP111TU NPN 达林顿晶体管对, 4 A, Vce=80 V, HFE=500, 3引脚 TO-220封装
|
||
TIP120TU
|
Fairchild | 类似代替 | TO-220-3 |
NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review