Technical parameters/dissipated power: | 2 W |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/minimum current amplification factor (hFE): | 1000 @1A, 4V |
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Technical parameters/rated power (Max): | 2 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 50 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 4.83 mm |
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Dimensions/Height: | 16.51 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bag |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP111TU
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON Semiconductor TIP111TU NPN 达林顿晶体管对, 4 A, Vce=80 V, HFE=500, 3引脚 TO-220封装
|
||
TIP111TU
|
Fairchild | 类似代替 | TO-220-3 |
ON Semiconductor TIP111TU NPN 达林顿晶体管对, 4 A, Vce=80 V, HFE=500, 3引脚 TO-220封装
|
||
TIP120TU
|
Fairchild | 类似代替 | TO-220-3 |
NPN 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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