Technical parameters/drain source resistance: | 41 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 270 W |
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Technical parameters/threshold voltage: | 5 V |
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Technical parameters/Input capacitance: | 1940pF @75V |
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Technical parameters/drain source voltage (Vds): | 150 V |
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Technical parameters/Leakage source breakdown voltage: | 150 V |
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Technical parameters/Continuous drain current (Ids): | 57.0 A |
|
Technical parameters/thermal resistance: | 0.46300000000000002℃/W (RθJC) |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/working junction temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Length: | 10 mm |
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Dimensions/Packaging: | TO-220 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK2943
|
Sanken Electric | 类似代替 | TO-220-3 |
Power Field-Effect Transistor, TO-220AB, TO-220F, FM20, 3 PIN
|
||
IXFH36N50P
|
IXYS Semiconductor | 功能相似 | TO-247-3 |
N 通道功率 MOSFET，IXYS HiperFET™ Polar™ 系列 IXYS N 通道功率 MOSFET，具有快速本征二极管 (HiPerFET™) ### MOSFET 晶体管，IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
||
IXTH36N50P
|
Littelfuse | 功能相似 |
IXYS SEMICONDUCTOR IXTH36N50P 晶体管, MOSFET, 极性FET, N沟道, 36 A, 500 V, 170 mohm, 10 V, 5 V
|
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