Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.23 Ω |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 39 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Continuous drain current (Ids): | 18A |
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Technical parameters/rise time: | 36 ns |
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Technical parameters/Input capacitance (Ciss): | 1500pF @100V(Vds) |
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Technical parameters/descent time: | 30 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 39 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.63 mm |
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Dimensions/Width: | 4.83 mm |
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Dimensions/Height: | 9.8 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Minimum Packaging: | 50 |
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Other/Manufacturing Applications: | Consumer electronics, power management, industrial, portable equipment |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDPF18N50
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FDPF18N50 晶体管, MOSFET, N沟道, 18 A, 500 V, 0.22 ohm, 10 V, 5 V
|
||
STF20NK50Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
N沟道500 V， 0.23 Ω ， 17的超网™功率MOSFET稳压保护TO- 220 ， TO- 247 ， TO- 220FP ， D2PAK N-channel 500 V, 0.23 Ω, 17 A SuperMESH? Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK
|
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