Technical parameters/number of channels: | 1 |
|
Technical parameters/dissipated power: | 40W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/rise time: | 20 ns |
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Technical parameters/Input capacitance (Ciss): | 2600pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 40 W |
|
Technical parameters/descent time: | 15 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 40W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Not Recommended for New Designs |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHF18N50D-E3
|
VISHAY | 功能相似 | TO-220-3 |
MOSFET Transistor, N Channel, 18A, 500V, 0.23Ω, 10V, 3V
|
||
SIHF18N50D-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET Transistor, N Channel, 18A, 500V, 0.23Ω, 10V, 3V
|
||
SIHF18N50D-E3
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
MOSFET Transistor, N Channel, 18A, 500V, 0.23Ω, 10V, 3V
|
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