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Model SIA413DJ-T1-GE3
Description VISHAY SIA413DJ-T1-GE3 Transistor, MOSFET, P-channel, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
Product QR code
Brand: Vishay Semiconductor
Packaging SC-70
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.62  yuan 2.62yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1026) Minimum order quantity(1)
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Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

0.024 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

19 W

 

Technical parameters/drain source voltage (Vds):

-12.0 V

 

Technical parameters/Continuous drain current (Ids):

-12.0 A

 

Technical parameters/Input capacitance (Ciss):

1800pF @10V(Vds)

 

Technical parameters/descent time:

40 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3500 mW

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SC-70

 

Dimensions/Height:

0.75 mm

 

Dimensions/Packaging:

SC-70

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Industrial, Power Management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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INFINEON IRLHS2242TRPBF 晶体管, MOSFET, P沟道, -7.2 A, -20 V, 25 mohm, -4.5 V, -800 mV
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