Technical parameters/drain source resistance: | 25 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 2.1 W |
|
Technical parameters/product series: | IRLHS2242 |
|
Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Input capacitance (Ciss): | 877pF @10V(Vds) |
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Technical parameters/rated power (Max): | 2.1 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | PowerVDFN-6 |
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Dimensions/Packaging: | PowerVDFN-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIA413DJ-T1-GE3
|
Vishay Semiconductor | 功能相似 | SC-70 |
VISHAY SIA413DJ-T1-GE3 晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
|
||
SIA413DJ-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-70-6 |
VISHAY SIA413DJ-T1-GE3 晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
|
||
SIA413DJ-T1-GE3
|
VISHAY | 功能相似 | SC-70-6 |
VISHAY SIA413DJ-T1-GE3 晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
|
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