Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 1 Ω |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 0.31 W |
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Technical parameters/threshold voltage: | 2 V |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 240mA |
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Technical parameters/rise time: | 4.8 ns |
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Technical parameters/rated power (Max): | 280 mW |
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Technical parameters/descent time: | 9.6 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 280 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SC-70-3 |
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Dimensions/Packaging: | SC-70-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 3000 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1330EDL-T1-GE3
|
VISHAY | 完全替代 | SOT-323-3 |
SI1330EDL-T1-GE3 N-channel MOSFET Transistor, 0.24A, 60V, 3Pin SOT-323
|
||
SSM3K7002BFU
|
Toshiba | 功能相似 | SOT-323 |
SSM3K7002BFU N沟道场效应管 60V 0.2A SOT323 代码 NM 高速开关 模拟开关 低导通电阻
|
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