Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SC-89-6 |
|
Dimensions/Packaging: | SC-89-6 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1035X-T1-GE3
|
Vishay Semiconductor | 完全替代 | SC-89 |
Si1035X Series N and P-Channel 20V 5Ω 0.25W(1/4W) SMT Power Mosfet - SC-89-6
|
||
SI1035X-T1-GE3
|
VISHAY | 完全替代 | SC-89-6 |
Si1035X Series N and P-Channel 20V 5Ω 0.25W(1/4W) SMT Power Mosfet - SC-89-6
|
||
SI1035X-T1-GE3
|
Vishay Siliconix | 完全替代 | SC-89-6 |
Si1035X Series N and P-Channel 20V 5Ω 0.25W(1/4W) SMT Power Mosfet - SC-89-6
|
||
SI1035X-T1-GE3
|
Vishay Intertechnology | 完全替代 | SC-89-6 |
Si1035X Series N and P-Channel 20V 5Ω 0.25W(1/4W) SMT Power Mosfet - SC-89-6
|
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