Technical parameters/drain source resistance: | 5 Ω |
|
Technical parameters/polarity: | N-Channel, P-Channel |
|
Technical parameters/dissipated power: | 250 mW |
|
Technical parameters/threshold voltage: | 400 mV |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Continuous drain current (Ids): | 180 mA |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SC-89 |
|
Dimensions/Packaging: | SC-89 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1035X-T1-E3
|
VISHAY | 完全替代 | SOT-563 |
MOSFET N/P-CH 20V SOT563F
|
||
SI1035X-T1-E3
|
Vishay Siliconix | 完全替代 | SC-89-6 |
MOSFET N/P-CH 20V SOT563F
|
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