Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.63 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 417 mW |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 0.52A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 0.417 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Length: | 3 mm |
|
Dimensions/Width: | 1.4 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | SOT-23 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Cut Tape (CT) |
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Other/Manufacturing Applications: | Power Management, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | PB free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTS2101PT1G
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ON Semiconductor | 功能相似 | SOT-323-3 |
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||
SI2303CDS-T1-GE3
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Vishay Dale | 功能相似 |
VISHAY SI2303CDS-T1-GE3. 场效应管, MOSFET, P沟道, -30V, -2.7A
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SI2303CDS-T1-GE3
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Vishay Intertechnology | 功能相似 |
VISHAY SI2303CDS-T1-GE3. 场效应管, MOSFET, P沟道, -30V, -2.7A
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SI2303CDS-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SI2303CDS-T1-GE3. 场效应管, MOSFET, P沟道, -30V, -2.7A
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