Technical parameters/dissipated power: | 5000 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 16 V |
|
Technical parameters/gain: | 8 dB |
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Technical parameters/minimum current amplification factor (hFE): | 20 @50mA, 5V |
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Technical parameters/rated power (Max): | 5 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 5000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-205 |
|
Dimensions/Height: | 6.6 mm |
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Dimensions/Packaging: | TO-205 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 200℃ (TJ) |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTE361
|
NTE Electronics | 功能相似 | TO-205 |
Trans RF BJT NPN 16V 0.4A 3Pin TO-39
|
||
SD1127
|
Advanced Semiconductor | 功能相似 | TO-39 |
射频与微波晶体管VHF通信 RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS
|
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