Technical parameters/dissipated power: 8000 mW
Technical parameters/output power: 2 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 8000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/height: 6.6 mm
External dimensions/packaging: TO-205
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF227
|
Advanced Semiconductor | 功能相似 | TO-39 |
RF Small Signal Bipolar Transistor, 0.6A I(C), 1Element, Very High Frequency Band, Silicon, NPN, TO-39, TO-39, 3Pin
|
||
MRF237
|
Advanced Semiconductor | 功能相似 | TO-39 |
RF Small Signal Bipolar Transistor, 1A I(C), 1Element, Very High Frequency Band, Silicon, NPN, TO-39, TO-39, 3Pin
|
||
SD1127
|
Advanced Semiconductor | 功能相似 | TO-39 |
RF Small Signal Bipolar Transistor, 0.64A I(C), 1Element, Very High Frequency Band, Silicon, NPN, TO-39, TO-39, 3Pin
|
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