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Model RS1E200GNTB
Description Field Effect Transistor (MOSFET) RS1E200GNTB HSOP-8
Product QR code
Brand: ROHM Semiconductor
Packaging HSOP-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.56  yuan 1.56yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6908) Minimum order quantity(1)
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Technical parameters/number of channels:

1

 

Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

3 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

20A

 

Technical parameters/rise time:

7.2 ns

 

Technical parameters/Input capacitance (Ciss):

1080pF @15V(Vds)

 

Technical parameters/descent time:

8.4 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3W (Ta), 25.1W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

HSOP-8

 

Dimensions/Packaging:

HSOP-8

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
RMW200N03TB RMW200N03TB ROHM Semiconductor 功能相似 SMD-8
SOP N-CH 30V 20A
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