Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 3 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 20A |
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Technical parameters/rise time: | 50 ns |
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Technical parameters/Input capacitance (Ciss): | 1780pF @15V(Vds) |
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Technical parameters/rated power (Max): | 3 W |
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Technical parameters/descent time: | 20 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 3W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SMD-8 |
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Dimensions/Packaging: | SMD-8 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RS1E200GNTB
|
ROHM Semiconductor | 功能相似 | HSOP-8 |
场效应管(MOSFET) RS1E200GNTB HSOP-8
|
||
|
|
Toshiba | 功能相似 | SOP |
SOP N-CH 30V 19A
|
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