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Model RRQ030P03TR

Description P Channel MOSFET transistor, ROHM # # # MOSFET transistor, ROHM Semiconductor

Brand: ROHM Semiconductor

Packaging TSOT-23-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	55 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	1.25 W
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30 V
Technical parameters/Continuous drain current (Ids):	3A
Technical parameters/rise time:	18 ns
Technical parameters/Input capacitance (Ciss):	480pF @10V(Vds)
Technical parameters/rated power (Max):	1.25 W
Technical parameters/descent time:	35 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	600mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	TSOT-23-6
Dimensions/Length:	3 mm
Dimensions/Width:	1.8 mm
Dimensions/Height:	0.95 mm
Dimensions/Packaging:	TSOT-23-6
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Discontinued at Digi-Key
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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