Technical parameters/number of channels: | 1 |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 27 mΩ |
|
Technical parameters/dissipated power: | 1 W |
|
Technical parameters/threshold voltage: | 500 mV |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Leakage source breakdown voltage: | 30 V |
|
Technical parameters/rise time: | 5.9 ns |
|
Technical parameters/Input capacitance (Ciss): | 480pF @15V(Vds) |
|
Technical parameters/descent time: | 5.7 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Technical parameters/dissipated power (Max): | 1W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-346-3 |
|
Dimensions/Packaging: | SOT-346-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RTR040N03TL
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
ROHM RTR040N03TL 晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review