Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 60 V |
|
Technical parameters/Continuous drain current (Ids): | 70A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RFP12N10L
|
Rochester | 功能相似 | TO-220 |
FAIRCHILD SEMICONDUCTOR RFP12N10L 晶体管, MOSFET, N沟道, 12 A, 100 V, 200 mohm, 5 V, 2 V
|
||
RFP12N10L
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR RFP12N10L 晶体管, MOSFET, N沟道, 12 A, 100 V, 200 mohm, 5 V, 2 V
|
||
RFP50N06
|
Fairchild | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
|
||
RFP50N06
|
Intersil | 功能相似 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
|
|||
RFP50N06
|
Freescale | 功能相似 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR RFP50N06 晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
|
||
RFP8P05
|
Fairchild | 类似代替 | TO-220-3 |
P沟道 50V 8A
|
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