Technical parameters/rated voltage (DC): | 100 V |
|
Technical parameters/rated current: | 12.0 A |
|
Technical parameters/drain source resistance: | 200 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 60.0 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Leakage source breakdown voltage: | 100 V |
|
Technical parameters/breakdown voltage of gate source: | ±10.0 V |
|
Technical parameters/Continuous drain current (Ids): | 12.0 A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF19N20
|
Fairchild | 类似代替 | TO-220-3 |
FAIRCHILD SEMICONDUCTOR FQPF19N20 晶体管, MOSFET, N沟道, 11.8 A, 200 V, 150 mohm, 10 V, 5 V
|
||
NTE2987
|
NTE Electronics | 功能相似 | TO-220 |
NTE ELECTRONICS NTE2987 芯片, 高速开关, MOSFET, N沟道, 20A, TO220-3
|
||
RFP30N06LE
|
Freescale | 功能相似 |
30A ， 60V ， ESD额定， 0.047欧姆，逻辑电平N沟道功率MOSFET 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
|
|||
RFP30P06
|
Fairchild | 功能相似 | TO-220-3 |
MOSFET P-CH 60V 30A TO-220AB
|
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