Technical parameters/rated voltage (DC): | 1.00 kV |
|
Technical parameters/rated current: | 4.30 A |
|
Technical parameters/dissipated power: | 150 W |
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Technical parameters/drain source voltage (Vds): | 1.00 kV |
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Technical parameters/Continuous drain current (Ids): | 4.30 A |
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Technical parameters/rise time: | 50 ns |
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Technical parameters/descent time: | 50 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.67 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 16.3 mm |
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Dimensions/Packaging: | TO-220-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Freescale | 功能相似 |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
|
|||
MTB3N100E
|
ON Semiconductor | 功能相似 | D2PAK-263 |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4Ω
|
||
MTP3N100E
|
ON Semiconductor | 功能相似 |
Trans MOSFET N-CH Si 1kV 3A 3Pin(3+Tab) TO-220AB
|
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