Technical parameters/dissipated power: | 60W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 50 V |
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Technical parameters/Input capacitance (Ciss): | 900pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 60W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RFP12N10L
|
Rochester | 功能相似 | TO-220 |
ON Semiconductor Si N沟道 MOSFET RFP12N10L, 12 A, Vds=100 V, 3引脚 TO-220AB封装
|
||
RFP12N10L
|
Fairchild | 功能相似 | TO-220-3 |
ON Semiconductor Si N沟道 MOSFET RFP12N10L, 12 A, Vds=100 V, 3引脚 TO-220AB封装
|
||
RFP50N06
|
Fairchild | 功能相似 | TO-220-3 |
ON Semiconductor MegaFET 系列 Si N沟道 MOSFET RFP50N06, 50 A, Vds=60 V, 3引脚 TO-220AB封装
|
||
RFP50N06
|
Intersil | 功能相似 |
ON Semiconductor MegaFET 系列 Si N沟道 MOSFET RFP50N06, 50 A, Vds=60 V, 3引脚 TO-220AB封装
|
|||
RFP50N06
|
Freescale | 功能相似 | TO-220-3 |
ON Semiconductor MegaFET 系列 Si N沟道 MOSFET RFP50N06, 50 A, Vds=60 V, 3引脚 TO-220AB封装
|
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