Technical parameters/rated voltage (DC): | 400 V |
|
Technical parameters/rated current: | 5.50 A |
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Technical parameters/number of pins: | 2 |
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Technical parameters/drain source resistance: | 1 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 75 W |
|
Technical parameters/product series: | IRF330 |
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Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 400 V |
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Technical parameters/Continuous drain current (Ids): | 5.50 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | TO-204 |
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Dimensions/Packaging: | TO-204 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Harris | 功能相似 | TO-204AA |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
2N6760
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
2N6760
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
|||
2N6760
|
Microsemi | 功能相似 | TO-204 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
IRF320
|
Fairchild | 功能相似 |
Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3
|
|||
IRF320
|
Samsung | 功能相似 |
Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3
|
|||
|
|
Fairchild | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
|||
IRF330
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
||
|
|
Intersil | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
|||
IRF330
|
International Rectifier | 功能相似 | TO-204 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
||
IRF330
|
TT Electronics Resistors | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
|||
JANTX2N6760
|
Microsemi | 完全替代 | TO-204 |
Trans MOSFET N-CH 400V 5.5A 3Pin(2+Tab) TO-3
|
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