Technical parameters/rated power: | 75 W |
|
Technical parameters/rise time: | 40 ns |
|
Technical parameters/Input capacitance (Ciss): | 620pF @25V(Vds) |
|
Technical parameters/descent time: | 35 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 75000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-204 |
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Dimensions/Packaging: | TO-204 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Harris | 功能相似 | TO-204AA |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
2N6760
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
2N6760
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
|||
2N6760
|
Microsemi | 功能相似 | TO-204 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
|
IRF320
|
Fairchild | 功能相似 |
Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3
|
|||
|
IRF320
|
Samsung | 功能相似 |
Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3
|
|||
|
|
Fairchild | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
|||
IRF330
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
||
|
|
Intersil | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
|||
IRF330
|
International Rectifier | 功能相似 | TO-204 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
||
|
IRF330
|
TT Electronics Resistors | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
|
|||
JANTX2N6760
|
Microsemi | 完全替代 | TO-204 |
Trans MOSFET N-CH 400V 5.5A 3Pin(2+Tab) TO-3
|
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