Technical parameters/dissipated power: | 75W (Tc) |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/rise time: | 28 ns |
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Technical parameters/Input capacitance (Ciss): | 1000pF @25V(Vds) |
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Technical parameters/descent time: | 30 ns |
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Technical parameters/dissipated power (Max): | 75W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not For New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
R5011FNX
|
Ricoh | 功能相似 |
10V驱动N沟道MOSFET 10V Drive Nch MOSFET
|
|||
R5011FNX
|
ROHM Semiconductor | 功能相似 | TO-220-3 |
10V驱动N沟道MOSFET 10V Drive Nch MOSFET
|
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