Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 520 mΩ |
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Technical parameters/polarity: | N |
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Technical parameters/dissipated power: | 59 W |
|
Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Leakage source breakdown voltage: | 500 V |
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Technical parameters/Continuous drain current (Ids): | 11A |
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Technical parameters/Input capacitance (Ciss): | 950pF @25V(Vds) |
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Technical parameters/rated power (Max): | 50 W |
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Technical parameters/dissipated power (Max): | 50W (Tc) |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Bulk |
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Other/Minimum Packaging: | 1000 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
R5011ANJTL
|
ROHM Semiconductor | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 500V 11A 3Pin(2+Tab) LPTS T/R
|
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