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Description NPNThe NPN silicon epitaxial transistor is designed for linear and switching applications. This device is designed for medium power surface mount applications using SOT-223 package.
Product QR code
Packaging TO-261-4
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.7  yuan 0.7yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7633) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

40.0 V

 

Technical parameters/rated current:

1.00 A

 

Technical parameters/number of pins:

4

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

1 W

 

Technical parameters/breakdown voltage (collector emitter):

40 V

 

Technical parameters/Maximum allowable collector current:

0.6A

 

Technical parameters/minimum current amplification factor (hFE):

100 @150mA, 10V

 

Technical parameters/maximum current amplification factor (hFE):

300

 

Technical parameters/rated power (Max):

1 W

 

Technical parameters/DC current gain (hFE):

100

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1000 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-261-4

 

Dimensions/Length:

6.7 mm

 

Dimensions/Width:

3.7 mm

 

Dimensions/Height:

1.7 mm

 

Dimensions/Packaging:

TO-261-4

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Minimum Packaging:

1000

 

Other/Manufacturing Applications:

Industrial, power management

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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