Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.6A |
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Technical parameters/minimum current amplification factor (hFE): | 100 |
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Technical parameters/maximum current amplification factor (hFE): | 300 |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-223 |
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Dimensions/Packaging: | SOT-223 |
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Other/Product Lifecycle: | Active |
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Other/Minimum Packaging: | 3000 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PZT2222
|
Diotec Semiconductor | 功能相似 |
NPN Suface Mount Si-Epitaxial Planar Switching Transistors
|
|||
PZT2222A
|
Philips | 完全替代 |
FAIRCHILD SEMICONDUCTOR PZT2222A 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1 W, 1 A, 100 hFE
|
|||
PZT2222A
|
UTC | 完全替代 | SOT-223 |
FAIRCHILD SEMICONDUCTOR PZT2222A 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1 W, 1 A, 100 hFE
|
||
|
|
Diotec Semiconductor | 完全替代 |
FAIRCHILD SEMICONDUCTOR PZT2222A 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1 W, 1 A, 100 hFE
|
|||
PZT2222A
|
ON Semiconductor | 完全替代 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR PZT2222A 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1 W, 1 A, 100 hFE
|
||
PZT2222A
|
Fairchild | 完全替代 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR PZT2222A 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1 W, 1 A, 100 hFE
|
||
PZT2222AT1G
|
ON Semiconductor | 类似代替 | TO-261-4 |
ON SEMICONDUCTOR PZT2222AT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 1.5 W, 600 mA, 300 hFE
|
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