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Model PUMH4,115

Description NXP PUMH4,115 Bipolar transistor array, NPN, 50 V, 200 mW, 100 mA, 200 hFE, SOT-363

Brand: NXP

Packaging SOT-363-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	6
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	200 mW
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	100mA
Technical parameters/minimum current amplification factor (hFE):	200 @1mA, 5V
Technical parameters/rated power (Max):	300 mW
Technical parameters/DC current gain (hFE):	200
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	300 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SOT-363-6
Dimensions/Packaging:	SOT-363-6
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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