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Model PUMH4

Description NXP PUMH4 Bipolar transistor array, NPN, 50 V, 200 mW, 100 mA, 200 hFE, SOT-363

Brand: NXP

Packaging SOT-363

Delivery time

Packaging method Cut Tape (CT)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(7925) Minimum order quantity(1)

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Technical parameters/number of pins:	6
Technical parameters/polarity:	NPN
Technical parameters/dissipated power:	200 mW
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	100mA
Technical parameters/minimum current amplification factor (hFE):	200
Technical parameters/DC current gain (hFE):	200
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SOT-363
Dimensions/Length:	2.2 mm
Dimensions/Width:	1.35 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-363
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Cut Tape (CT)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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