Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.0075 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 170 W |
|
Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 80 V |
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Technical parameters/Input capacitance (Ciss): | 3346pF @40V(Vds) |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 170 W |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Length: | 10.3 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 16 mm |
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Dimensions/Packaging: | TO-220 |
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Other/Product Lifecycle: | Unknown |
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Other/Manufacturing Applications: | Power Management, Consumer Electronics, Industrial, Communications & Networking, Motor Drive & Control |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD19503KCS
|
TI | 功能相似 | TO-220-3 |
80V、N 通道 NexFET(TM) 功率 MOSFET,CSD19503KCS
|
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