Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 6.2 mΩ |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 86 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Continuous drain current (Ids): | 77A |
|
Technical parameters/Input capacitance (Ciss): | 1262pF @12V(Vds) |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 86 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Length: | 10.3 mm |
|
Dimensions/Width: | 4.7 mm |
|
Dimensions/Height: | 16 mm |
|
Dimensions/Packaging: | TO-220 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Unknown |
|
Other/Manufacturing Applications: | Industrial, Power Management, Consumer Electronics, Communications & Networking, Motor Drive & Control |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | TO-220-3 |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
||
PHP101NQ04T,127
|
NXP | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 40V 75A 3Pin(3+Tab) TO-220AB Rail
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review